Ultrafast Electron–Phonon Coupling at Metal-Dielectric Interface

Energy transfer from photo-excited electrons in a metal thin film to the dielectric substrate is important for understanding the ultrafast heat transfer process across the two materials. Substantial research has been conducted to investigate heat transfer in a metal-dielectric structure. In this work, a two-temperature model in metal was used to analyze the interface electron and dielectric substrate coupling. An improved temperature and wavelength-dependent Drude–Lorentz model was implemented to interpret the signals obtained in optical measurements. Ultrafast pump-and-probe measurements on Au-Si samples were carried out, where the probe photon energy was chosen to be close to the interband transition threshold of gold to minimize the influence of non-equilibrium electrons on the optical response and maximize the thermal modulation to the optical reflectance. Electron-substrate interface thermal conductance at different pump laser fluences was obtained, and was found to increase with the interface temperature.     

Flame characteristics of premixed H2-air mixtures explosion venting in a spherical container through a duct

The explosion venting duct can effectively reduce the hazard degree of a gas explosion and conduct the venting energy to the safe area. To investigate the flame quantitative propagation law of explosion venting with a duct, the effects of hydrogen fraction and explosion venting duct length on jet flame propagation characteristics of premixed H₂-air mixtures were analyzed through experiment and simulation. The experiment results under initial conditions of room temperature and 1 atm show that when hydrogen fraction was high enough, part of the unburned hydrogen was mixed with air again to reach an ignitable concentration, resulting in the secondary combustion was easier produced and the duration of the secondary flame increased. With the increase of venting duct length, the flame front distance and propagation velocity increased. Meanwhile, the spatial distribution of pressure field and temperature field, and the propagation process and mechanism of the flame venting with a duct were analyzed using FLUENT software. The variation of the pressure wave and the pressure reflection oscillation law in the explosion venting duct was captured. Therefore, in the industrial explosion venting design with a duct, the hazard caused by the coupling of venting pressure and venting flame under different fractions should be considered comprehensively.     

Safety study on HIC containing waste resin with respect to hydrogen release

To explore the behavior of radiolytically produced hydrogen release from the waste resin stored in a high integrated container(HIC), and the mechanism of hydrogen diffusion in a near-surface disposal facility, both experimental studies and numerical simulations were performed through an accelerated irradiation test and simulated disposal, respectively. Results indicated that,100 years after disposal, the highest hydrogen concentration appeared in the cell where the HICs were placed. The volume fraction for different scenarios postulated in the numerical simulation was 2.64% for Scenario 1, 2.28% for Scenario 2, and 3.965% for Scenario 3, all of which are lower than the hydrogen explosion limit of 4.1%. The results indicated that the simulated HIC disposal scheme is safe.     

基于分段加权的反向稀疏跟踪算法研究

为提高稀疏表示跟踪模型性能，提出一种分段加权的反向稀疏跟踪算法，将跟踪问题转化为在贝叶斯框架下寻找概率最高的候选对象问题，构造不同的分段权重函数来分别度量候选目标与正负模板的判别特征系数。通过池化来降低跟踪结果的不确定性干扰，选择正负模板加权系数差值最大的候选表示作为跟踪结果。实验表明，在光照变化、遮挡、快速运动、运动模糊情况下，所提出的算法可以确保跟踪结果的准确性和鲁棒性。     

DNAN及TNT基熔铸炸药综合性能比较

为了对比载体炸药2,4,6-三硝基甲苯(TNT)和2,4-二硝基苯甲醚(DNAN)、以及以它们为基的熔铸炸药的综合性能,系统研究了DNAN和TNT、以及DNAN/HMX(20/80)和TNT/HMX(25/75)熔铸炸药的流变、能量、安全、以及力学等性能。结果表明:载体炸药DNAN(6.87 m Pa·s)的粘度低于TNT(9.05 mPa·s),DNAN/HMX熔铸体系的极限固含量(约80%)高于TNT/HMX熔铸体系(约75%);DNAN/HMX(20/80)和TNT/HMX(25/75)熔铸炸药的爆速分别为8336 m·s~(-1)和8452 m·s~(-1),爆压分别为31.03 GPa和31.44 GPa;在1 K·min~(-1)的慢速烤燃条件下,DNAN/HMX(20/80)和TNT/HMX(25/75)熔铸炸药的响应等级分别为燃烧反应和爆炸反应;在4.51GPa的冲击波入射压力条件下,TNT/HMX(25/75)在8～12 mm内达到完全爆轰,而DNAN/HMX(20/80)在12 mm内未能达到完全爆轰;DNAN/HMX(20/80)的抗拉和抗压强度均大于TNT/HMX(25/75)。因此可以得出结论,在能量性能基本持平的情况下,DNAN/HMX(20/80)熔铸炸药的安全及力学性能优于TNT/HMX(25/75)熔铸炸药。     

环形通道内液态铅铋合金流动换热特性实验研究

通过对环形通道内液态铅铋合金的流动换热特性进行实验研究，得到了气泡泵注气对液态金属流动的影响，并拟合出环形通道内液态铅铋合金的摩擦系数关系式和换热特性关系式。结果表明：采用气泡泵注气能有效提升铅铋合金的质量流速；相同Reynolds数下环形通道内液态铅铋合金的摩擦系数大于由布拉休斯公式计算得到的摩擦系数；液态铅铋合金对流换热过程中，导热项占主导地位，并且Nusselt数随Peclet数的增大而增大。     

Crystallographic characteristics and microwave dielectric properties of Ni-modified MgTa2O6 ceramics

Ni²⁺ modified MgTa₂O₆ ceramics with a trirutile phase and space group P4₂/mnm were obtained. The correlations between crystallographic characteristics and microwave dielectric performance of MgTa₂O₆ ceramics were systematically studied based on the chemistry bond theory (PVL theory) for the first time. The results indicate that the introduction of Ni²⁺ causes a change in polarizability and the Mg–O bond ionicity, which contributes to the variation of dielectric constant. Moreover, the lattice energy, and packing fraction, full width at half maximum of the Raman peak of Ta–O bond, as the quantitative characterization of crystallographic parameters, regulate the dielectric loss of MgTa₂O₆ ceramics in GHz frequency band. In addition, the study of sintering behavior shows that the densification and micromorphology are the crucial factors affecting the microwave dielectric performance. Typically, Ni²⁺ doping on the A-site of MgTa₂O₆ can effectively promote the Q × f values to 173,000 GHz (at 7.43 GHz), which ensures its applicability in 5G communication technology.     

含锡废液的安全处理技术研究

论述了两级沉淀法对含锡废液的处理技术,通过实验得到两级沉淀法处置含锡废液的最优条件,实现了含锡废液的安全有效快速处理.     

Investigation of crystal characteristics,Raman spectra,and microwave dielectric properties of Mg1-xZnxTa2O6 ceramics

Mg_(1-x)Zn_xTa₂O₆ (x = 0.00?0.08) dielectric ceramics were synthesized via the traditional solid-state reaction method. We used XRD and Rietveld refinement to demonstrate that a pure Mg_(1-x)Zn_xTa₂O₆ phase with trirutile structure was formed. Zn²⁺ substitution helped to decrease the Raman full width at half width of the A_1g mode at 703 cm^?1, which resulted in an increase in the order and rigidity of the TaO₆ octahedron, this in turn contributed to improving the Q×f values. Additionally, the introduction of Zn²⁺ significantly promoted grain growth and increased the dense, and the molecular polarizability, these factors lead to a higher permittivity. Moreover, enhanced Ta-O bond energy resulted in a more stable TaO₆ octahedron in the Mg_(1?x)Zn_xTa₂O₆ system, which contributed to enhanced τ_f values via substitution of Zn²⁺ doped on the A-site. Correspondingly, the microwave dielectric properties were significantly improved for 0.04-doped samples, obtaining: ε_r = 27, Q × f = 185,000 GHz (at 7.47 GHz), τ_f =32 ppm/°C.